Invention Grant
- Patent Title: Manufacturing method of semiconductor substrate and method and apparatus for inspecting defects of patterns of an object to be inspected
- Patent Title (中): 半导体基板的制造方法以及检查被检查体的图案的缺陷的方法和装置
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Application No.: US10686584Application Date: 2003-10-17
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Publication No.: US07180584B2Publication Date: 2007-02-20
- Inventor: Shunji Maeda , Yasuhiko Nakayama , Minoru Yoshida , Hitoshi Kubota , Kenji Oka
- Applicant: Shunji Maeda , Yasuhiko Nakayama , Minoru Yoshida , Hitoshi Kubota , Kenji Oka
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout and Kraus, LLP.
- Priority: JP6-268130 19941007
- Main IPC: G01N21/00
- IPC: G01N21/00

Abstract:
A pattern detection method and apparatus thereof for inspecting with high resolution a micro fine defect of a pattern on an inspected object and a semiconductor substrate manufacturing method and system for manufacturing semiconductor substrates such as semiconductor wafers with a high yield. A micro fine pattern on the inspected object is inspected by irradiating an annular-looped illumination through an objective lens onto a wafer mounted on a stage, the wafer having micro fine patterns thereon. The illumination light may be circularly or elliptically polarized and controlled according to an image detected on the pupil of the objective lens and image signals are obtained by detecting a reflected light from the wafer. The image signals are compared with reference image signals and a part of the pattern showing inconsistency is detected as a defect so that simultaneously, a micro fine defect or defects on the micro fine pattern are detected with high resolution. Further, process conditions of a manufacturing line are controlled by analyzing a cause of defect and a factor of defect which occurs on the pattern.
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