Invention Grant
- Patent Title: Embedded capacitor with interdigitated structure
- Patent Title (中): 具有交叉结构的嵌入式电容器
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Application No.: US11224224Application Date: 2005-09-13
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Publication No.: US07202548B2Publication Date: 2007-04-10
- Inventor: Sheng-Yuan Lee
- Applicant: Sheng-Yuan Lee
- Applicant Address: TW Taipei
- Assignee: VIA Technologies, Inc.
- Current Assignee: VIA Technologies, Inc.
- Current Assignee Address: TW Taipei
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/00
- IPC: H01L29/00

Abstract:
An embedded capacitors with interdigitated structure for a package carrier or a printed circuit board comprises a plurality of stacked conductive layers, at least one first via connecting structure and at least one second via connecting structure. In order to enhance the capacitance and the layout efficiency, this case fully utilizes the spaces between the via connecting structures for disposing at least one extending line extended from the via connecting structure to simultaneously increase side-to-side and layer-to-layer capacitances. Thus, the present invention provides a capacitance larger than that of conventional design.
Public/Granted literature
- US20070057344A1 EMBEDDED CAPACITOR WITH INTERDIGITATED STRUCTURE Public/Granted day:2007-03-15
Information query
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