Invention Grant
- Patent Title: Heat dissipating structure and semiconductor package with the same
- Patent Title (中): 散热结构和半导体封装相同
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Application No.: US10851288Application Date: 2004-05-21
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Publication No.: US07203072B2Publication Date: 2007-04-10
- Inventor: Chin-Te Chen , Chang-Fu Lin
- Applicant: Chin-Te Chen , Chang-Fu Lin
- Applicant Address: TW
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW
- Agency: Edwards Angell Palmer & Dodge LLP
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW92125310A 20030915
- Main IPC: H05K7/02
- IPC: H05K7/02 ; H05K7/06 ; H05K7/08 ; H05K7/10

Abstract:
A heat dissipating structure and a semiconductor package with the same are proposed. A substrate is used to accommodate at least one chip thereon, and the chip is electrically connected to the substrate. A heat dissipating structure having a flat portion and a support portion is mount on the substrate via the support portion by means of an adhesive. At least one groove is formed on the support portion and at least one air vent is formed around the groove to allow the groove to communicate with the outside via the air vent, such that the adhesive is allowed to fill the groove to expel air from the groove to the atmosphere through the air vent, thereby preventing the air from trapped in the groove.
Public/Granted literature
- US20050056926A1 Heat dissipating structure and semiconductor package with the same Public/Granted day:2005-03-17
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