Invention Grant
- Patent Title: Methods and structures for critical dimension and profile measurement
- Patent Title (中): 关键尺寸和型材测量的方法和结构
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Application No.: US10949037Application Date: 2004-09-24
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Publication No.: US07208331B2Publication Date: 2007-04-24
- Inventor: Jyu-Horng Shieh , Wen-Chih Chiou , Peng-Fu Hsu , Baw-Ching Perng , Hun-Jan Tao , Chia-Jen Chen
- Applicant: Jyu-Horng Shieh , Wen-Chih Chiou , Peng-Fu Hsu , Baw-Ching Perng , Hun-Jan Tao , Chia-Jen Chen
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW
- Agency: Duane Morris LLP
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L23/58
Abstract:
Methods and structures for critical dimension or profile measurement are disclosed. The method provides a substrate having periodic openings therein. Material layers are formed in the openings, substantially planarizing a surface of the substrate. A scattering method is applied to the substrate with the material layers for critical dimension (CD) or profile measurement.
Public/Granted literature
- US20060073620A1 Methods and structures for critical dimension and profile measurement Public/Granted day:2006-04-06
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