Invention Grant
US07223652B2 Capacitor and manufacturing method thereof, semiconductor device and substrate for a semiconductor device
有权
电容器及其制造方法，用于半导体器件的半导体器件和衬底
- Patent Title: Capacitor and manufacturing method thereof, semiconductor device and substrate for a semiconductor device
- Patent Title (中): 电容器及其制造方法，用于半导体器件的半导体器件和衬底
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Application No.: US11048556Application Date: 2005-02-01
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Publication No.: US07223652B2Publication Date: 2007-05-29
- Inventor: Kiyoshi Ooi , Yasuyoshi Horikawa , Tomoo Yamasaki
- Applicant: Kiyoshi Ooi , Yasuyoshi Horikawa , Tomoo Yamasaki
- Applicant Address: JP Nagano
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano
- Agency: Ladas & Parry LLP
- Priority: JP2002-314694 20021029
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L51/40 ; H01L21/8244 ; H01L21/8242
Abstract:
A capacitor includes a capacitor part formed of a dielectric film sandwiched by a pair of electrodes and a support body formed of a film of an organic polysilane. The support body is provided so as to support the capacitor part thereon.
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