Invention Grant
US07235798B2 Focused ion beam apparatus 有权
聚焦离子束装置

Focused ion beam apparatus
Abstract:
In order to implement faster high precision milling and high resolution image observation in the structure analysis and failure analysis of the MEMS and semiconductor devices, a two-lens optical system is mounted on a focused ion beam apparatus, and in the optical system the distance from an emitter apex in an ion source to an earth electrode included in a condenser lens and disposed nearest to the ion source is in the range of 5 to 14 mm.
Public/Granted literature
Information query
Patent Agency Ranking
0/0