Invention Grant
- Patent Title: Focused ion beam apparatus
- Patent Title (中): 聚焦离子束装置
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Application No.: US11151425Application Date: 2005-06-14
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Publication No.: US07235798B2Publication Date: 2007-06-26
- Inventor: Tohru Ishitani , Hiroyuki Muto , Yuichi Madokoro
- Applicant: Tohru Ishitani , Hiroyuki Muto , Yuichi Madokoro
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2004-177261 20040615
- Main IPC: G21K5/10
- IPC: G21K5/10

Abstract:
In order to implement faster high precision milling and high resolution image observation in the structure analysis and failure analysis of the MEMS and semiconductor devices, a two-lens optical system is mounted on a focused ion beam apparatus, and in the optical system the distance from an emitter apex in an ion source to an earth electrode included in a condenser lens and disposed nearest to the ion source is in the range of 5 to 14 mm.
Public/Granted literature
- US20050279952A1 Focused ion beam apparatus Public/Granted day:2005-12-22
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