Invention Grant
US07238912B2 Wafer characteristics via reflectometry and wafer processing apparatus and method
有权
通过反射镜和晶片处理装置和方法的晶片特性
- Patent Title: Wafer characteristics via reflectometry and wafer processing apparatus and method
- Patent Title (中): 通过反射镜和晶片处理装置和方法的晶片特性
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Application No.: US10547579Application Date: 2004-10-06
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Publication No.: US07238912B2Publication Date: 2007-07-03
- Inventor: Bhushan L. Sopori
- Applicant: Bhushan L. Sopori
- Applicant Address: US MO Kansas City
- Assignee: Midwest Research Institute
- Current Assignee: Midwest Research Institute
- Current Assignee Address: US MO Kansas City
- Agent Paul J. White
- International Application: PCT/US2004/032899 WO 20041006
- International Announcement: WO2005/036601 WO 20050421
- Main IPC: B23K26/38
- IPC: B23K26/38 ; B23K26/12 ; H01L21/00 ; G01N21/47

Abstract:
An exemplary system includes a measuring device to acquire non-contact thickness measurements of a wafer and a laser beam to cut the wafer at a rate based at least in part on one or more thicknesses measurements. An exemplary method includes illuminating a substrate with radiation, measuring at least some radiation reflected from the substrate, determining one or more cutting parameters based at least in part on the measured radiation and cutting the substrate using the one or more cutting parameters. Various other exemplary methods, devices, systems, etc., are also disclosed.
Public/Granted literature
- US20060219678A1 Wafer characteristics via reflectometry and wafer processing apparatus and method Public/Granted day:2006-10-05
Information query
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