Invention Grant
- Patent Title: Embedded capacitor structure in circuit board and method for fabricating the same
- Patent Title (中): 电路板中的嵌入式电容器结构及其制造方法
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Application No.: US11264999Application Date: 2005-11-01
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Publication No.: US07244647B2Publication Date: 2007-07-17
- Inventor: Ruei-Chih Chang
- Applicant: Ruei-Chih Chang
- Applicant Address: CN Hsin-Chu, Taiwan
- Assignee: Phoenix Precision Technology Corporation
- Current Assignee: Phoenix Precision Technology Corporation
- Current Assignee Address: CN Hsin-Chu, Taiwan
- Agency: Fulbright & Jaworski L.L.P.
- Priority: TW92128802A 20031017
- Main IPC: H01L21/8242
- IPC: H01L21/8242

Abstract:
An embedded capacitor structure in a circuit board and a method for fabricating the same are proposed. The circuit board is formed with a first circuit layer on at least one surface thereof, wherein the first circuit layer has at least one first electrode plate for the capacitor structure. Then, a dielectric layer is formed on the first circuit layer and made flush with the first circuit layer. The dielectric layer has a relatively low dielectric constant and good fluidity to effectively fill the spaces between patterned traces of the first circuit later. A capacitive material is deposited on the dielectric layer and the first circuit layer. Finally, a second circuit layer is formed on the capacitive material and has at least one second electrode plate corresponding to the first electrode plate, together with the capacitive material disposed in-between, to form the capacitor structure.
Public/Granted literature
- US20060063325A1 Embedded capacitor structure in circuit board and method for fabricating the same Public/Granted day:2006-03-23
Information query
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