Invention Grant
- Patent Title: Recycling of a wafer comprising a multi-layer structure after taking-off a thin layer
- Patent Title (中): 在剥离薄层之后回收包括多层结构的晶片
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Application No.: US11075273Application Date: 2005-03-07
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Publication No.: US07256075B2Publication Date: 2007-08-14
- Inventor: Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Yves Mathieu Le Vaillant
- Applicant: Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Yves Mathieu Le Vaillant
- Applicant Address: FR Bernin
- Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: FR0300099 20030107
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The invention relates to a method of transferring useful layers from a donor wafer which includes a multi-layer structure on the surface of the donor wafer that has a thickness sufficient to form multiple useful layers for subsequent detachment. The layers may be formed of materials having sufficiently different properties such that they may be selectively removed. The layers of material may also include sub-layers that can be selectively removed from each other.
Public/Granted literature
- US20050170611A1 Recycling of a wafer comprising a multi-layer structure after taking-off a thin layer Public/Granted day:2005-08-04
Information query
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