Invention Grant
- Patent Title: Silicon carbide and other films and method of deposition
- Patent Title (中): 碳化硅等薄膜及沉积方法
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Application No.: US10716006Application Date: 2003-11-18
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Publication No.: US07261919B2Publication Date: 2007-08-28
- Inventor: Mehran Mehregany , Christian A. Zorman , Xiao-An Fu , Jeremy L. Dunning
- Applicant: Mehran Mehregany , Christian A. Zorman , Xiao-An Fu , Jeremy L. Dunning
- Applicant Address: US OH Cleveland
- Assignee: FLX Micro, Inc.
- Current Assignee: FLX Micro, Inc.
- Current Assignee Address: US OH Cleveland
- Main IPC: C23C16/00
- IPC: C23C16/00
Abstract:
A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.
Public/Granted literature
- US20050106320A1 Silicon carbide and other films and method of deposition Public/Granted day:2005-05-19
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