Invention Grant
- Patent Title: Quartz glass crucible for the pulling up of silicon single crystal
- Patent Title (中): 石英玻璃坩埚用于提升硅单晶
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Application No.: US10559086Application Date: 2004-05-21
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Publication No.: US07299658B2Publication Date: 2007-11-27
- Inventor: Yasuo Ohama , Takayuki Togawa , Shigeo Mizuno
- Applicant: Yasuo Ohama , Takayuki Togawa , Shigeo Mizuno
- Applicant Address: DE Hanau JP Tokyo
- Assignee: Heraeus Quarzglas GmbH & Co. K.G.,Shin-Etsu Quartz Products Co. Ltd.
- Current Assignee: Heraeus Quarzglas GmbH & Co. K.G.,Shin-Etsu Quartz Products Co. Ltd.
- Current Assignee Address: DE Hanau JP Tokyo
- Agency: Tiajoloff & Kelly
- Priority: JP2003-154845 20030530
- International Application: PCT/JP2004/006947 WO 20040521
- International Announcement: WO2004/106247 WO 20040912
- Main IPC: C03B11/08
- IPC: C03B11/08 ; C30B35/00

Abstract:
A quartz glass crucible for use in pulling up a silicon single crystal, wherein it has, at least in the curved portion thereof, a three-layer structure comprising a transparent inner layer being composed of a synthetic quartz glass and having a low Al concentration, a transparent or nontransparent intermediate layer being composed of a natural quartz glass or a mixture of natural and synthetic quartz glasses and having a high Al concentration, and a nontransparent outer layer being composed of a natural quartz glass and having an Al concentration higher than that of the intermediate layer. The quartz glass crucible is reduced in the deformation of the transparent inner layer, and allows the suppression of the change in the amount of dissolution of the quartz glass crucible associated with the pull-up of a single crystal and the achievement of the uniform oxygen concentration in the longitudinal direction of a single crystal.
Public/Granted literature
- US20060144327A1 Quartz glass crucible for the pulling up of silicon single crystal Public/Granted day:2006-07-06
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