Invention Grant
- Patent Title: Method for packaging a semiconductor device
- Patent Title (中): 封装半导体器件的方法
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Application No.: US11290300Application Date: 2005-11-30
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Publication No.: US07344917B2Publication Date: 2008-03-18
- Inventor: Viswanadam Gautham
- Applicant: Viswanadam Gautham
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Charles Bergere
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48 ; H01L21/50
Abstract:
A method for packaging a semiconductor device includes forming through holes (12) in a base substrate (10) and depositing a conductive material (14) on a first side (16) of the base substrate (10) to form a conductive layer (18) such that the conductive material (14) fills the through holes (12). The conductive layer (18) is patterned and etched to form interconnect traces and pads (22). Conductive supports (24) are formed on the pads (22) such that the conductive supports (24) extend through respective ones of the through holes (12).
Public/Granted literature
- US20070122940A1 Method for packaging a semiconductor device Public/Granted day:2007-05-31
Information query
IPC分类:
