Invention Grant
US07351607B2 Large scale patterned growth of aligned one-dimensional nanostructures
有权
对齐的一维纳米结构的大规模图案生长
- Patent Title: Large scale patterned growth of aligned one-dimensional nanostructures
- Patent Title (中): 对齐的一维纳米结构的大规模图案生长
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Application No.: US11010178Application Date: 2004-12-10
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Publication No.: US07351607B2Publication Date: 2008-04-01
- Inventor: Zhong L. Wang , Christopher J. Summers , Xudong Wang , Elton D. Graugnard , Jeffrey King
- Applicant: Zhong L. Wang , Christopher J. Summers , Xudong Wang , Elton D. Graugnard , Jeffrey King
- Applicant Address: US GA Atlanta
- Assignee: Georgia Tech Research Corporation
- Current Assignee: Georgia Tech Research Corporation
- Current Assignee Address: US GA Atlanta
- Agency: Bockhop & Associates LLC
- Agent Bryan W. Bockhop
- Main IPC: H01L51/40
- IPC: H01L51/40
Abstract:
A method of making nanostructures using a self-assembled monolayer of organic spheres is disclosed. The nanostructures include bowl-shaped structures and patterned elongated nanostructures. A bowl-shaped nanostructure with a nanorod grown from a conductive substrate through the bowl-shaped nanostructure may be configured as a field emitter or a vertical field effect transistor. A method of separating nanoparticles of a desired size employs an array of bowl-shaped structures.
Public/Granted literature
- US20050224779A1 Large scale patterned growth of aligned one-dimensional nanostructures Public/Granted day:2005-10-13
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