Invention Grant
- Patent Title: Semiconductor device with reduced contact resistance
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Application No.: US11153097Application Date: 2005-06-15
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Publication No.: US07382051B2Publication Date: 2008-06-03
- Inventor: Sven Fuchs , Mark Pavier
- Applicant: Sven Fuchs , Mark Pavier
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Ostrolenk, Faber, Gerb & Soffen, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A semiconductor device that includes an electrode of one material and a conductive material of lower resistivity formed over the electrode and a process for fabricating the semiconductor device.
Public/Granted literature
- US20060049514A1 Semiconductor device with reduced contact resistance Public/Granted day:2006-03-09
Information query
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