Invention Grant
- Patent Title: Compensation units for reducing the effects of self-heating and increasing linear performance in bipolar transistors
- Patent Title (中): 用于减少双极型晶体管的自加热效应和线性性能的补偿单元
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Application No.: US11087068Application Date: 2005-03-21
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Publication No.: US07425871B2Publication Date: 2008-09-16
- Inventor: Huai Gao , Haitao Zhang , Huinan Guan , Guann-Pyng Li
- Applicant: Huai Gao , Haitao Zhang , Huinan Guan , Guann-Pyng Li
- Applicant Address: US CA Oakland
- Assignee: Regents of the University of California
- Current Assignee: Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Orrick, Herrington & Sutcliffe LLP
- Main IPC: H03F1/30
- IPC: H03F1/30
Abstract:
The systems and methods described herein provide for composite transistor circuit having a bipolar transistor and a compensation unit. The compensation unit can be configured to stabilize the DC biasing point of the bipolar transistor. The compensation unit can compensate for the self-heating effect in the bipolar transistor and/or improve the linear performance of the bipolar transistor. The compensation unit can include a nonlinear resistor in series with a switch and can be configured to increase the base current into the bipolar transistor as the output voltage of the circuit increases.
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