Invention Grant
US07438955B2 Titanium nitride thin film formation on metal substrate by chemical vapor deposition in a magnetized sheet plasma source
有权
通过在磁化片材等离子体源中的化学气相沉积在金属基底上形成氮化钛薄膜
- Patent Title: Titanium nitride thin film formation on metal substrate by chemical vapor deposition in a magnetized sheet plasma source
- Patent Title (中): 通过在磁化片材等离子体源中的化学气相沉积在金属基底上形成氮化钛薄膜
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Application No.: US10505994Application Date: 2002-02-27
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Publication No.: US07438955B2Publication Date: 2008-10-21
- Inventor: Henry J. Ramos
- Applicant: Henry J. Ramos
- Applicant Address: PH Metro Manila PH Quezon City
- Assignee: Philippine Council for Advanced Science and Technology Research and Development,University of the Philippines Diliman
- Current Assignee: Philippine Council for Advanced Science and Technology Research and Development,University of the Philippines Diliman
- Current Assignee Address: PH Metro Manila PH Quezon City
- Agency: Ohlandt, Greeley, Ruggiero & Perle, L.L.P.
- International Application: PCT/PH02/00003 WO 20020227
- International Announcement: WO03/074755 WO 20030912
- Main IPC: H05H1/24
- IPC: H05H1/24 ; C23C16/00 ; C23C14/00 ; C23C14/32
Abstract:
A procedure for the synthesis of titanium nitride (TiN) thin films on metal substrate by vapor deposition using a magnetized sheet plasma source is disclosed. TiN films on metal substrate exhibiting the stoichiometric TiN and Ti2N were synthesized in a mixed N2/Ar plasma with initial gas filing ratio of preferably 1:3 under the following conditions: total initial gas filing pressure of at least about 40 mTorr, plasma current in the range of about 2A to 3A and plasma discharge potential in the range of about 125V to about 150V.
Public/Granted literature
- US20050126903A1 Method for formation of titanium nitride films Public/Granted day:2005-06-16
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