Invention Grant
US07449361B2 Semiconductor substrate with islands of diamond and resulting devices
失效
具有金刚石岛和结晶器件的半导体衬底
- Patent Title: Semiconductor substrate with islands of diamond and resulting devices
- Patent Title (中): 具有金刚石岛和结晶器件的半导体衬底
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Application No.: US11230031Application Date: 2005-09-19
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Publication No.: US07449361B2Publication Date: 2008-11-11
- Inventor: Rajashree Baskaran , Kramadhati V. Ravi
- Applicant: Rajashree Baskaran , Kramadhati V. Ravi
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/44
Abstract:
Disclosed is a method of forming a substrate having islands of diamond (or other material, such as diamond-like carbon), as well as integrated circuit devices formed from such a substrate. A diamond island can form part of the thermal solution for an integrated circuit formed on the substrate, and the diamond island can also provide part of a stress engineering solution to improve performance of the integrated circuit. Other embodiments are described and claimed.
Public/Granted literature
- US20070066034A1 Semiconductor substrate with islands of diamond and resulting devices Public/Granted day:2007-03-22
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