Invention Grant
US07462574B2 Silica glass containing TiO2 and optical material for EUV lithography
有权
含二氧化硅的玻璃和用于EUV光刻的光学材料
- Patent Title: Silica glass containing TiO2 and optical material for EUV lithography
- Patent Title (中): 含二氧化硅的玻璃和用于EUV光刻的光学材料
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Application No.: US11174533Application Date: 2005-07-06
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Publication No.: US07462574B2Publication Date: 2008-12-09
- Inventor: Yasutomi Iwahashi , Akio Koike
- Applicant: Yasutomi Iwahashi , Akio Koike
- Applicant Address: JP Tokyo
- Assignee: Asahi Glass Company, Limited
- Current Assignee: Asahi Glass Company, Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- Priority: JP2003-100798 20030403; JP2003-100799 20030403; JP2004-076312 20040317
- Main IPC: C03C3/06
- IPC: C03C3/06 ; G02B1/00 ; C03B19/00 ; C03B19/14

Abstract:
A silica glass containing TiO2, characterized in that the fluctuation of the refractive index (Δn) is at most 2×10−4 within an area of 30 mm×30 mm in at least one plane. A silica glass containing TiO2, characterized in that the TiO2 concentration is at least 1 mass %, and the striae pitch is at most 10 μm. An optical material for EUV lithography, characterized in that it is made of a silica glass containing TiO2, and the fluctuation of the refractive index (Δn) is at most 2×10−4 in a plane perpendicular to the incident light direction. An optical material for EUV lithography, characterized in that it is made of a silica glass containing TiO2, wherein the TiO2 concentration is at least 1 mass %, and the difference between the maximum value and the minimum value of the TiO2 concentration is at most 0.06 mass % in a plane perpendicular to the incident light direction.
Public/Granted literature
- US20050245383A1 Silica glass containing TiO2 and optical material for EUV lithography Public/Granted day:2005-11-03
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