Invention Grant
US07504328B2 Schottky barrier source/drain n-mosfet using ytterbium silicide
失效
肖特基势垒源/漏极n-mosfet使用镱硅化物
- Patent Title: Schottky barrier source/drain n-mosfet using ytterbium silicide
- Patent Title (中): 肖特基势垒源/漏极n-mosfet使用镱硅化物
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Application No.: US11126031Application Date: 2005-05-10
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Publication No.: US07504328B2Publication Date: 2009-03-17
- Inventor: Shiyang Zhu , Jingde Chen , Sungjoo Lee , Ming Fu Li , Jagar Singh , Chunxiang Zhu , Dim-Lee Kwong
- Applicant: Shiyang Zhu , Jingde Chen , Sungjoo Lee , Ming Fu Li , Jagar Singh , Chunxiang Zhu , Dim-Lee Kwong
- Applicant Address: SG Singapore
- Assignee: National University of Singapore
- Current Assignee: National University of Singapore
- Current Assignee Address: SG Singapore
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: H01L21/441
- IPC: H01L21/441
Abstract:
A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.
Public/Granted literature
- US20050275033A1 Schottky barrier source/drain N-MOSFET using ytterbium silicide Public/Granted day:2005-12-15
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