Method for creating narrow trenches in dielectric materials

Invention Grant

US07560357B2 Method for creating narrow trenches in dielectric materials 有权

Title translation: 在介电材料中形成窄沟槽的方法

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Patent Title: Method for creating narrow trenches in dielectric materials
Patent Title (中): 在介电材料中形成窄沟槽的方法
Application No.: US11532190

Application Date: 2006-09-15
Publication No.: US07560357B2

Publication Date: 2009-07-14
Inventor: Gerald Beyer
Applicant: Gerald Beyer
Applicant Address: BE Leuven
Assignee: Interuniversitair Microelektronica Centrum
Current Assignee: Interuniversitair Microelektronica Centrum
Current Assignee Address: BE Leuven
Agency: McDonnell Boehnen Hulbert & Berghoff LLP
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L21/336 ; H01L21/76 ; H01L29/76 ; H01L29/00

Method for creating narrow trenches in dielectric materials

Abstract:

A method for producing narrow trenches in semiconductor devices. The narrow trenches are formed by chemically changing the properties of a first dielectric layer locally, such that the side walls of a patterned hole in the first dielectric layer is converted locally and becomes etchable by a first etching substance. Subsequently a second dielectric material is deposited in the patterned structure and the damaged part of the first dielectric material is removed such that small trenches are obtained.

Abstract(Chinese):

一种在半导体器件中制造窄沟槽的方法。通过局部化学地改变第一电介质层的性质来形成窄沟槽，使得第一介电层中的图案化孔的侧壁被局部地转换并且可被第一蚀刻物质蚀刻。随后，在图案化结构中沉积第二介电材料，并且去除第一介电材料的损坏部分，从而获得小的沟槽。

Public/Granted literature

US20070066028A1 METHOD FOR CREATING NARROW TRENCHES IN DIELECTRIC MATERIALS Public/Granted day:2007-03-22

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS