Invention Grant
- Patent Title: Method for manufacturing circuit device
- Patent Title (中): 电路装置制造方法
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Application No.: US11138932Application Date: 2005-05-25
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Publication No.: US07565738B2Publication Date: 2009-07-28
- Inventor: Ryosuke Usui , Hideki Mizuhara , Yusuke Igarashi , Nobuhisa Takakusaki , Hayato Abe
- Applicant: Ryosuke Usui , Hideki Mizuhara , Yusuke Igarashi , Nobuhisa Takakusaki , Hayato Abe
- Applicant Address: JP Osaka
- Assignee: Sanyo Electric Co., Ltd.
- Current Assignee: Sanyo Electric Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Fish & Richardson P.C.
- Priority: JPP2004-162656 20040531; JPP2004-164536 20040602
- Main IPC: H01K3/10
- IPC: H01K3/10

Abstract:
A method for manufacturing a circuit device, which is suitable for connecting a plurality of laminated wiring layers to each other through an insulating layer, is provided. In a method for manufacturing a hybrid integrated circuit device of the present invention, a first wring layer is formed by laminating a first conductive film on a first insulating layer, and patterning the first conductive film. In the first wiring layer, a first connection part which is protruded in a thickness direction is formed. Moreover, the first wiring layer including the first connection part is covered with a second insulating layer. The second insulating layer is formed of a first resin film and a second resin film. The second resin film contains fewer inorganic fillers than the first resin film. Thus, there is an advantage that a through-hole can be easily formed.
Public/Granted literature
- US20050263905A1 Method for manufacturing circuit device Public/Granted day:2005-12-01
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