Invention Grant
- Patent Title: White-light fluorescent lamp having luminescence layer with silicon quantum dots
- Patent Title (中): 具有硅量子点的发光层的白光荧光灯
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Application No.: US11454949Application Date: 2006-06-19
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Publication No.: US07569984B2Publication Date: 2009-08-04
- Inventor: Tsun-Neng Yang , Chien-Te Ku
- Applicant: Tsun-Neng Yang , Chien-Te Ku
- Applicant Address: TW Taoyuan
- Assignee: Atomic Energy Council-Institute of Nuclear Energy Research
- Current Assignee: Atomic Energy Council-Institute of Nuclear Energy Research
- Current Assignee Address: TW Taoyuan
- Agency: Troxell Law Office PLLC
- Main IPC: H01J1/62
- IPC: H01J1/62 ; H01J9/24
Abstract:
A structure is formed by putting glass plates between a luminescence generating device and an electron emitting device so that a vacuum is formed in between. After in putting a high-voltage, an electron beam is emitted from the electron emitting device using low power. In the end, silicon quantum dots in the luminescence generating device are excited to generate a white light. The present invention has a good optoelectronic transformation efficiency.
Public/Granted literature
- US20090167146A1 WHITE-LIGHT FLUORESCENT LAMP HAVING LUMINESCENCE LAYER WITH SILICON QUANTUM DOTS Public/Granted day:2009-07-02
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