Invention Grant
US07579273B2 Method of manufacturing a photodiode array with through-wafer vias
有权
制造具有贯通晶片通孔的光电二极管阵列的方法
- Patent Title: Method of manufacturing a photodiode array with through-wafer vias
- Patent Title (中): 制造具有贯通晶片通孔的光电二极管阵列的方法
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Application No.: US11837150Application Date: 2007-08-10
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Publication No.: US07579273B2Publication Date: 2009-08-25
- Inventor: Robin Wilson , Conor Brogan , Hugh J. Griffin , Cormac MacNamara
- Applicant: Robin Wilson , Conor Brogan , Hugh J. Griffin , Cormac MacNamara
- Applicant Address: GB Belfast, Northern Ireland
- Assignee: Icemos Technology Ltd.
- Current Assignee: Icemos Technology Ltd.
- Current Assignee Address: GB Belfast, Northern Ireland
- Agency: Panitch Schwarze Belisario & Nadel LLP
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A method for manufacturing a photodiode array includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has a first layer of a first conductivity proximate the first main surface and a second layer of a second conductivity proximate the second main surface. A via is formed in the substrate which extends to a first depth position relative to the first main surface. The via has a first aspect ratio. Generally simultaneously with forming the via, an isolation trench is formed in the substrate spaced apart from the via which extends to a second depth position relative to the first main surface. The isolation trench has a second aspect ratio different from the first aspect ratio.
Public/Granted literature
- US20080099870A1 METHOD OF MANUFACTURING A PHOTODIODE ARRAY WITH THROUGH-WAFER VIAS Public/Granted day:2008-05-01
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