Invention Grant
US07588674B2 Method and apparatus for maintaining parallelism of layers and/or achieving desired thicknesses of layers during the electrochemical fabrication of structures 有权
在结构的电化学制造期间保持层的平行度和/或实现所需厚度的层的方法和装置

  • Patent Title: Method and apparatus for maintaining parallelism of layers and/or achieving desired thicknesses of layers during the electrochemical fabrication of structures
  • Patent Title (中): 在结构的电化学制造期间保持层的平行度和/或实现所需厚度的层的方法和装置
  • Application No.: US11028944
    Application Date: 2005-01-03
  • Publication No.: US07588674B2
    Publication Date: 2009-09-15
  • Inventor: Uri FrodisAdam L. CohenMichael S. Lockard
  • Applicant: Uri FrodisAdam L. CohenMichael S. Lockard
  • Applicant Address: US CA Van Nuys
  • Assignee: Microfabrica Inc.
  • Current Assignee: Microfabrica Inc.
  • Current Assignee Address: US CA Van Nuys
  • Agent Dennis R. Smalley
  • Main IPC: C25D5/52
  • IPC: C25D5/52
Method and apparatus for maintaining parallelism of layers and/or achieving desired thicknesses of layers during the electrochemical fabrication of structures
Abstract:
Some embodiments of the present invention provide processes and apparatus for electrochemically fabricating multilayer structures (e.g. mesoscale or microscale structures) with improved endpoint detection and parallelism maintenance for materials (e.g. layers) that are planarized during the electrochemical fabrication process. Some methods involve the use of a fixture during planarization that ensures that planarized planes of material are parallel to other deposited planes within a given tolerance. Some methods involve the use of an endpoint detection fixture that ensures precise heights of deposited materials relative to an initial surface of a substrate, relative to a first deposited layer, or relative to some other layer formed during the fabrication process. In some embodiments planarization may occur via lapping while other embodiments may use a diamond fly cutting machine.
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