Invention Grant
- Patent Title: Ferroelectric film with ferroelectric domain array
- Patent Title (中): 铁电薄膜与铁电畴阵列
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Application No.: US11432240Application Date: 2006-05-10
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Publication No.: US07604877B2Publication Date: 2009-10-20
- Inventor: Wen-Hui Duan , Zhong-Qing Wu , Jian Wu , Bing-Lin Gu
- Applicant: Wen-Hui Duan , Zhong-Qing Wu , Jian Wu , Bing-Lin Gu
- Applicant Address: CN Beijing TW Tu-Cheng, Taipei Hsien
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW Tu-Cheng, Taipei Hsien
- Agent D. Austin Bonderer
- Main IPC: C30B29/30
- IPC: C30B29/30 ; C30B29/22 ; B32B15/04 ; C30B30/00
Abstract:
A ferroelectric film includes a plurality of ferroelectric nanodomains configured in a regularly staggered fashion. The ferroelectric film has a quasi 2-dimensional configuration and is comprised of a ferroelectric material. A method for forming a ferroelectric film is also provided. A ferroelectric film comprised of a ferroelectric material is prepared. The ferroelectric film has a quasi 2-dimensional configuration and defines a direction that is normal to the quasi 2-dimensional configuration. An electric field along the normal direction is applied to the ferroelectric film, thereby the ferroelectric film having an array of ferroelectric nanodomains configured in a regularly staggered fashion is obtained.
Public/Granted literature
- US20070072010A1 Ferroelectric film with ferroelectric domain array and method for forming same Public/Granted day:2007-03-29
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