Invention Grant
- Patent Title: Semiconductor device for detecting flow rate of fluid
- Patent Title (中): 用于检测流体流量的半导体器件
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Application No.: US12000462Application Date: 2007-12-13
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Publication No.: US07640798B2Publication Date: 2010-01-05
- Inventor: Teruo Oda
- Applicant: Teruo Oda
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2006-346565 20061222
- Main IPC: G01F1/68
- IPC: G01F1/68

Abstract:
A semiconductor device includes: a semiconductor substrate; a flow sensor having a first heater for detecting a flow rate of fluid; and a humidity sensor for detecting a humidity of the fluid. The flow sensor and the humidity sensor are disposed on the semiconductor substrate. The flow sensor is disposed around the humidity sensor. The humidity sensor is disposed on an upstream side of the first heater. Since the device includes the humidity sensor, moisture in the fluid is compensated so that detection accuracy of the flow rate is improved.
Public/Granted literature
- US20080148842A1 Semiconductor device for detecting flow rate of fluid Public/Granted day:2008-06-26
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