Invention Grant
US07641818B2 Ga-In-O amorphous oxide transparent conductive film, and transparent conductive base material comprising this conductive film formed thereon
有权
Ga-In-O非晶氧化物透明导电膜，以及在其上形成有该导电膜的透明导电性基材
- Patent Title: Ga-In-O amorphous oxide transparent conductive film, and transparent conductive base material comprising this conductive film formed thereon
- Patent Title (中): Ga-In-O非晶氧化物透明导电膜，以及在其上形成有该导电膜的透明导电性基材
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Application No.: US12314238Application Date: 2008-12-05
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Publication No.: US07641818B2Publication Date: 2010-01-05
- Inventor: Tokuyuki Nakayama , Yoshiyuki Abe
- Applicant: Tokuyuki Nakayama , Yoshiyuki Abe
- Applicant Address: JP Tokyo
- Assignee: Sumitomo Metal Mining Co., Ltd.
- Current Assignee: Sumitomo Metal Mining Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2006-048701 20060224
- Main IPC: H01B1/08
- IPC: H01B1/08
Abstract:
A sintered body target for transparent conductive film fabrication is chiefly composed of Ga, In, and O; has a Ga content ranging from 49.1 at. % to 65 at. % with respect to all metallic atoms; is chiefly constructed from a β-GaInO3 phase and an In2O3 phase; provides an In2O3 phase (400)/β-GaInO3 phase (111) X-ray diffraction peak intensity ratio that is 45% or less; and has a density of 5.8 g/cm3 or more. A transparent conductive film obtained by using a sputtering technique is an amorphous oxide transparent conductive film chiefly composed of Ga, In, and O, so that a Ga content ranges from 49.1 at. % to 65 at. % with respect to all metallic atoms, a work function is 5.1 eV or more, and a refractive index for light with a wavelength of 633 nm ranges from 1.65 to 1.85.
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