Invention Grant
US07641988B2 Self-supported nitride semiconductor substrate and its production method, and light-emitting nitride semiconductor device using it
有权
自支撑氮化物半导体衬底及其制造方法以及使用它的发光氮化物半导体器件
- Patent Title: Self-supported nitride semiconductor substrate and its production method, and light-emitting nitride semiconductor device using it
- Patent Title (中): 自支撑氮化物半导体衬底及其制造方法以及使用它的发光氮化物半导体器件
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Application No.: US10821957Application Date: 2004-04-12
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Publication No.: US07641988B2Publication Date: 2010-01-05
- Inventor: Takayuki Suzuki
- Applicant: Takayuki Suzuki
- Applicant Address: JP Tokyo
- Assignee: Hitachi Cable, Ltd.
- Current Assignee: Hitachi Cable, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2004-018884 20040127
- Main IPC: B32B9/00
- IPC: B32B9/00 ; B32B19/00 ; C30B19/00 ; C30B23/00 ; C30B25/00
Abstract:
A self-supported nitride semiconductor substrate of 10 mm or more in diameter having an X-ray diffraction half width of 500 seconds or less in at least one of a {20-24} diffraction plane and a {11-24} diffraction plane.
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