Invention Grant
US07642101B2 Semiconductor device having in-chip critical dimension and focus patterns
失效
具有芯片临界尺寸和聚焦图案的半导体器件
- Patent Title: Semiconductor device having in-chip critical dimension and focus patterns
- Patent Title (中): 具有芯片临界尺寸和聚焦图案的半导体器件
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Application No.: US11567055Application Date: 2006-12-05
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Publication No.: US07642101B2Publication Date: 2010-01-05
- Inventor: George Liu , Vencent Chang , Chin-Hsiang Lin , Kuei Shun Chen , Norman Chen
- Applicant: George Liu , Vencent Chang , Chin-Hsiang Lin , Kuei Shun Chen , Norman Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/66
- IPC: H01L21/66 ; G01R31/26

Abstract:
A semiconductor device is fabricated to include one or more sets of calibration patterns used to measure line pitch and line focus.
Public/Granted literature
- US20080128924A1 Semiconductor Device Having In-Chip Critical Dimension and Focus Patterns Public/Granted day:2008-06-05
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