Invention Grant
US07642105B2 Manufacturing method for partially-good memory modules with defect table in EEPROM
有权
EEPROM中具有缺陷表的部分良好存储器模块的制造方法
- Patent Title: Manufacturing method for partially-good memory modules with defect table in EEPROM
- Patent Title (中): EEPROM中具有缺陷表的部分良好存储器模块的制造方法
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Application No.: US11944551Application Date: 2007-11-23
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Publication No.: US07642105B2Publication Date: 2010-01-05
- Inventor: Ramon S. Co , Mike Chen , David Sun
- Applicant: Ramon S. Co , Mike Chen , David Sun
- Applicant Address: US CA Fountain Valley
- Assignee: Kingston Technology Corp.
- Current Assignee: Kingston Technology Corp.
- Current Assignee Address: US CA Fountain Valley
- Agency: gPatent LLC
- Agent Stuart T. Auvinen
- Main IPC: H01L21/66
- IPC: H01L21/66 ; G01R31/26 ; G11C29/00

Abstract:
A manufacturing method makes memory modules from partially-good DRAM chips soldered to its substrate. The partially-good DRAM chips have a number of defective memory cells that is below a test threshold, such as 10%. Packaged DRAM chips are optionally pre-screened and considered to pass when the number of defects found is less than the test threshold. A defect table is created during testing and written to a serial-presence-detect electrically-erasable read-only memory (SPD-EEPROM) on the memory module. The memory module is finally tested on a target-system tester that reads the defect table during booting, and redirects memory access to defective memory locations identified by the defect table. The memory modules may be burned in or tested at various temperatures and voltages to increase reliability.
Public/Granted literature
- US20090137070A1 Manufacturing Method for Partially-Good Memory Modules with Defect Table in EEPROM Public/Granted day:2009-05-28
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