Invention Grant
US07642116B1 Method of forming a photodiode that reduces the effects of surface recombination sites
有权
形成光电二极管的方法，其减少了表面复合位点的影响
- Patent Title: Method of forming a photodiode that reduces the effects of surface recombination sites
- Patent Title (中): 形成光电二极管的方法，其减少了表面复合位点的影响
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Application No.: US11476525Application Date: 2006-06-28
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Publication No.: US07642116B1Publication Date: 2010-01-05
- Inventor: Peter J. Hopper , Michael Mian , Robert Drury
- Applicant: Peter J. Hopper , Michael Mian , Robert Drury
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Mark C. Pickering
- Main IPC: H01L31/113
- IPC: H01L31/113
Abstract:
The loss of photogenerated electrons to surface electron-hole recombination sites is minimized by utilizing a first p-type surface region to form a depletion region that functions as a first barrier that repels photogenerated electrons from the surface recombination sites, and a second p-type surface region that provides a substantial change in the dopant concentration.
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