Invention Grant
- Patent Title: Method for forming nitride crystals
- Patent Title (中): 形成氮化物晶体的方法
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Application No.: US11973182Application Date: 2007-10-05
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Publication No.: US07642122B2Publication Date: 2010-01-05
- Inventor: Steven Alfred Tysoe , Dong-Sil Park , John Thomas Leman , Mark Philip D'Evelyn , Kristi Jean Narang , Huicong Hong
- Applicant: Steven Alfred Tysoe , Dong-Sil Park , John Thomas Leman , Mark Philip D'Evelyn , Kristi Jean Narang , Huicong Hong
- Applicant Address: US NY Albany
- Assignee: Momentive Performance Materials Inc.
- Current Assignee: Momentive Performance Materials Inc.
- Current Assignee Address: US NY Albany
- Agent Joseph E. Waters
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00
Abstract:
A method for growing a nitride crystal and a crystalline composition selected from one of AlN, InGaN, AlGaInN, InGaN, and AlGaNInN is provided. The composition comprises a true single crystal, grown from a single nucleus, at least 1 mm in diameter, free of lateral strain and tilt boundaries, with a dislocation density less than about 104 cm−2.
Public/Granted literature
- US20080087919A1 Method for forming nitride crystals Public/Granted day:2008-04-17
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