Invention Grant
US07642183B2 High power, high luminous flux light emitting diode and method of making same
有权
大功率,高光通量发光二极管及其制作方法
- Patent Title: High power, high luminous flux light emitting diode and method of making same
- Patent Title (中): 大功率,高光通量发光二极管及其制作方法
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Application No.: US11150155Application Date: 2005-06-13
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Publication No.: US07642183B2Publication Date: 2010-01-05
- Inventor: Yongsheng Zhao , William W. So , Kevin Y. Ma , Chyi S. Chern , Heng Liu , Eugene J. Ruddy
- Applicant: Yongsheng Zhao , William W. So , Kevin Y. Ma , Chyi S. Chern , Heng Liu , Eugene J. Ruddy
- Applicant Address: CN Dalian
- Assignee: Dalian Meiming,Epitaxy Technology Co., Ltd.
- Current Assignee: Dalian Meiming,Epitaxy Technology Co., Ltd.
- Current Assignee Address: CN Dalian
- Agency: Akerman Senterfitt
- Agent Jean C. Edwards, Esq.
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A high power, high luminous flux light emitting diode (LED) comprises a substrate, a light-emitting structure, a first electrode and a second electrode. The LED has a top surface layout design in which the first electrode has a number of legs extending in one direction, and the second electrode has a number of legs extending in the opposite direction. At least portions of the legs of the first electrode are interspersed with and spaced apart from portions of the legs of the second electrode. This provides a configuration that enhances current spreading along the length of the legs of both electrodes.
Public/Granted literature
- US20050236637A1 High power, high luminous flux light emitting diode and method of making same Public/Granted day:2005-10-27
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