Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device

Invention Grant

US07642185B2 Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device 有权

Title translation: 能够提高碳化硅膜等的粘附性的半导体装置的绝缘膜形成方法

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Patent Title: Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device
Patent Title (中): 能够提高碳化硅膜等的粘附性的半导体装置的绝缘膜形成方法
Application No.: US11724219

Application Date: 2007-03-15
Publication No.: US07642185B2

Publication Date: 2010-01-05
Inventor: Tamotsu Owada , Hirofumi Watatani , Ken Sugimoto , Shun-ichi Fukuyama
Applicant: Tamotsu Owada , Hirofumi Watatani , Ken Sugimoto , Shun-ichi Fukuyama
Applicant Address: JP Tokyo
Assignee: Fujitsu Microelectronics Limited
Current Assignee: Fujitsu Microelectronics Limited
Current Assignee Address: JP Tokyo
Agency: Westerman, Hattori, Daniels & Adrian, LLP
Priority: JP2004-133964 20040428
Main IPC: H01L21/4763
IPC: H01L21/4763

Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device

Abstract:

A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic surface of the first film, a second film is formed which is an insulating film made of a low dielectric constant insulating material having a relative dielectric constant of 2.7 or smaller or an insulating film made by a coating method. A sufficient adhesion property is obtained when a film made of low dielectric constant insulating material is formed on an insulating film made of silicon carbide having a small amount of oxygen contents.

Abstract(Chinese):

在基板上形成由碳化硅制成的第一膜。第一膜的表面暴露于氧化气氛以氧化第一膜的表面层。第一膜的表面与化学品接触，使表面亲水。在第一膜的亲水表面上，形成第二膜，该第二膜是由相对介电常数为2.7以下的低介电常数绝缘材料制成的绝缘膜，或通过涂布法制成的绝缘膜。当在由少量氧含量的碳化硅制成的绝缘膜上形成由低介电常数绝缘材料制成的膜时，获得了足够的附着性。

Public/Granted literature

US20070173054A1 Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device Public/Granted day:2007-07-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）