Invention Grant
- Patent Title: Method of forming wiring of a semiconductor memory device
- Patent Title (中): 形成半导体存储器件布线的方法
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Application No.: US11905397Application Date: 2007-09-28
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Publication No.: US07642187B2Publication Date: 2010-01-05
- Inventor: Sang-Hyun Lee , Min-Soo Kim , Tae-Hoon Kim
- Applicant: Sang-Hyun Lee , Min-Soo Kim , Tae-Hoon Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2006-0094646 20060928
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method of forming a wiring for a semiconductor memory device includes obtaining a semiconductor substrate, depositing at least one conductive layer on the semiconductor substrate under controlled conditions, such as substrate temperature and atmosphere temperature, to provide a conductive layer exhibiting a reduced surface roughness as compared to a comparable conductive layer deposited under uncontrolled conditions, and patterning the conductive layer to form a wiring.
Public/Granted literature
- US20080146027A1 Method of forming wiring of a semiconductor memory device Public/Granted day:2008-06-19
Information query
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