Invention Grant
- Patent Title: Methods of forming moisture barrier for low k film integration with anti-reflective layers
- Patent Title (中): 形成与抗反射层低k膜一体化的防潮层的方法
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Application No.: US11168013Application Date: 2005-06-27
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Publication No.: US07642202B1Publication Date: 2010-01-05
- Inventor: Ming Li , Bart Van Schravendijk , Tom Mountsier , Chiu Chi , Kevin Ilcisin , Julian Hsieh
- Applicant: Ming Li , Bart Van Schravendijk , Tom Mountsier , Chiu Chi , Kevin Ilcisin , Julian Hsieh
- Applicant Address: US CA San Jose
- Assignee: Novellus Systems, Inc.
- Current Assignee: Novellus Systems, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, a substantially hermetic layer with acceptable values of the refractive index n and extinction coefficient k can be obtained. The nitrogen-free moisture barrier anti-reflective layer produced by this technique improves plasma etch of features such as vias in subsequent processing steps.
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