Invention Grant
- Patent Title: Methods of forming fluorine doped insulating materials
- Patent Title (中): 形成氟掺杂绝缘材料的方法
-
Application No.: US10769430Application Date: 2004-01-30
-
Publication No.: US07642204B2Publication Date: 2010-01-05
- Inventor: Anand Srinivasan , Gurtej Sandhu , Ravi Iyer
- Applicant: Anand Srinivasan , Gurtej Sandhu , Ravi Iyer
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/316
- IPC: H01L21/316
Abstract:
In one aspect, the invention includes a method of forming an insulating material comprising: a) providing a substrate within a reaction chamber; b) providing reactants comprising a Si, F and ozone within the reaction chamber; and c) depositing an insulating material comprising fluorine, silicon and oxygen onto the substrate from the reactants. In another aspect, the invention includes a method of forming a boron-doped silicon oxide having Si—F bonds, comprising: a) providing a substrate within a reaction chamber; b) providing reactants comprising Triethoxy fluorosilane, a boron-containing precursor, and ozone within the reaction chamber; and c) depositing a boron-doped silicon oxide having Si—F bonds onto the substrate from the reactants. In yet another aspect, the invention includes a method of forming a phosphorus-doped silicon oxide having Si—F bonds, comprising: a) providing a substrate within a reaction chamber; b) providing reactants comprising triethoxy fluorosilane, a phosphorus-containing precursor, and ozone within the reaction chamber; and c) depositing a phosphorus-doped silicon oxide having Si—F bonds onto the substrate from the reactants.
Public/Granted literature
- US20040185183A1 Methods of forming fluorine doped insulating materials Public/Granted day:2004-09-23
Information query
IPC分类:
