Invention Grant
- Patent Title: Silicon nitride sintered material and method for manufacturing
- Patent Title (中): 氮化硅烧结体及其制造方法
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Application No.: US10569753Application Date: 2004-08-25
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Publication No.: US07642209B2Publication Date: 2010-01-05
- Inventor: Yoshihiro Okawa , Takehiro Oda
- Applicant: Yoshihiro Okawa , Takehiro Oda
- Applicant Address: JP Kyoto
- Assignee: Kyocera Corporation
- Current Assignee: Kyocera Corporation
- Current Assignee Address: JP Kyoto
- Agency: Hogan & Hartson LLP
- Priority: JP2003-301102 20030826; JP2003-398234 20031127
- International Application: PCT/JP2004/012188 WO 20040825
- International Announcement: WO2005/019133 WO 20050303
- Main IPC: C04B35/591
- IPC: C04B35/591 ; C04B35/596

Abstract:
A silicon nitride sintered material includes a silicon nitride crystal and a grain boundary layer that contains at least two of a first metal silicide (a metal silicide having, as a first metal element, at least one selected from the group consisting of Fe, Cr, Mn and Cu), a second metal silicide (a metal silicide having, as a second metal element, at least one of W or Mo) and a third metal silicide (a metal silicide having a plurality of metal elements including the first metal element and the second metal element), wherein the grain boundary layer has neighboring phase where at least two of the first through third metal silicides exist in contact with each other.
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