Invention Grant
- Patent Title: Layer and system with a silicon layer and a passivation layer, method for production of a passivation layer on a silicon layer and use thereof
- Patent Title (中): 具有硅层和钝化层的层和系统,在硅层上制造钝化层的方法及其用途
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Application No.: US10520886Application Date: 2003-05-06
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Publication No.: US07642545B2Publication Date: 2010-01-05
- Inventor: Andrea Urban , Franz Laermer , Klaus Breitschwerdt
- Applicant: Andrea Urban , Franz Laermer , Klaus Breitschwerdt
- Applicant Address: DE Stuttgart
- Assignee: Robert Bosch GmbH
- Current Assignee: Robert Bosch GmbH
- Current Assignee Address: DE Stuttgart
- Agency: Kenyon & Kenyon LLP
- Priority: DE10234589 20020730
- International Application: PCT/DE03/01436 WO 20030506
- International Announcement: WO2004/016546 WO 20040226
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A layer system and a method for producing the layer system are provided, the layer system having a silicon layer, on which at least regionally a passivating layer is superficially deposited, the passivating layer having a first, at least largely inorganic partial layer and a second, at least largely polymer partial layer. The method includes producing on the silicon layer, a first, inorganic partial layer, and producing on this first partial layer a second, polymer partial layer, which form the passivating layer. The production of the intermediate layer occurs in such a way that the intermediate layer in its surface area adjoining the first partial layer is composed as the first partial layer, and the intermediate layer in its surface area adjoining the second partial layer is composed as the second partial layer. The composition of the intermediate layer transitions, either continuously or in steps, from the composition corresponding to the first partial layer into the composition corresponding to the second partial layer.
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