Invention Grant
- Patent Title: Molecular memory devices including solid-state dielectric layers and related methods
- Patent Title (中): 分子存储器件包括固态介质层和相关方法
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Application No.: US11607503Application Date: 2006-11-30
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Publication No.: US07642546B2Publication Date: 2010-01-05
- Inventor: Veena Misra , Ritu Shrivastava , Zhong Chen , Guru Mathur
- Applicant: Veena Misra , Ritu Shrivastava , Zhong Chen , Guru Mathur
- Applicant Address: US CO Englewood US NC Raleigh
- Assignee: Zettacore, Inc.,North Carolina State University
- Current Assignee: Zettacore, Inc.,North Carolina State University
- Current Assignee Address: US CO Englewood US NC Raleigh
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: H01L35/24
- IPC: H01L35/24

Abstract:
According to some embodiments, an article of manufacture comprises a substrate; a molecular layer on the substrate comprising at least one charge storage molecule coupled to the substrate by a molecular linker; a solid barrier dielectric layer directly on the molecular layer; and a conductive layer directly on the solid barrier dielectric layer. In some embodiments, the solid barrier dielectric layer is configured to provide a voltage drop across the molecular layer that is greater than a voltage drop across the solid barrier dielectric layer when a voltage is applied to the conductive layer. In some embodiments, the molecular layer has a thickness greater than that of the solid barrier dielectric layer. The article of manufacture contains no electrolyte between the molecular layer and the conductive layer.
Public/Granted literature
- US20070164374A1 Molecular memory devices including solid-state dielectric layers and related methods Public/Granted day:2007-07-19
Information query
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