Invention Grant
US07642585B2 Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
有权
非易失性存储器单元，包括相同的存储器阵列以及操作单元和阵列的方法
- Patent Title: Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
- Patent Title (中): 非易失性存储器单元，包括相同的存储器阵列以及操作单元和阵列的方法
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Application No.: US11324492Application Date: 2006-01-03
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Publication No.: US07642585B2Publication Date: 2010-01-05
- Inventor: Szu Yu Wang , Hang-Ting Lue
- Applicant: Szu Yu Wang , Hang-Ting Lue
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a small hole-tunneling-barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays thereof and methods of operation.
Public/Granted literature
- US20060202252A1 Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays Public/Granted day:2006-09-14
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