Invention Grant
US07642588B2 Memory cells with planar FETs and vertical FETs with a region only in upper region of a trench and methods of making and using same
有权
具有平面FET的存储单元和仅在沟槽的上部区域中的区域的垂直FET，以及制造和使用它们的方法
- Patent Title: Memory cells with planar FETs and vertical FETs with a region only in upper region of a trench and methods of making and using same
- Patent Title (中): 具有平面FET的存储单元和仅在沟槽的上部区域中的区域的垂直FET，以及制造和使用它们的方法
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Application No.: US11259296Application Date: 2005-10-26
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Publication No.: US07642588B2Publication Date: 2010-01-05
- Inventor: Kangguo Cheng , Jack A. Mandelman
- Applicant: Kangguo Cheng , Jack A. Mandelman
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Dugan & Dugan, PC
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
In a first aspect, a first apparatus is provided. The first apparatus is a memory cell of a substrate that includes (1) a PFET with an orientation approximately planar to a surface of the substrate; and (2) an NFET coupled to the approximately planar PFET. An orientation of the NFET in the substrate is approximately perpendicular to the orientation of the PFET. Numerous other aspects are provided.
Public/Granted literature
- US20070090393A1 Gain cells and methods of making and using the same Public/Granted day:2007-04-26
Information query
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