Invention Grant
- Patent Title: Dual isolation for image sensors
- Patent Title (中): 图像传感器的双重隔离
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Application No.: US11716342Application Date: 2007-03-09
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Publication No.: US07642608B2Publication Date: 2010-01-05
- Inventor: Xiaofeng Fan , Richard A. Mauritzson
- Applicant: Xiaofeng Fan , Richard A. Mauritzson
- Applicant Address: KY George Town
- Assignee: Aptina Imaging Corporation
- Current Assignee: Aptina Imaging Corporation
- Current Assignee Address: KY George Town
- Agency: Treyz Law Group
- Agent G. Victor Treyz
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119

Abstract:
Methods, methods of making, devices, and systems for image sensors that include isolation regions are disclosed. A semiconductor imager includes a pixel array and peripheral circuitry arranged on at least one side of the pixel array. Array devices are formed as part of the pixel array and periphery devices are formed in the periphery. Array isolation regions are disposed around at least a portion of at least some of the array devices and periphery isolation regions are disposed around at least a portion of at least some of the periphery devices. Within the semiconductor imager, the periphery isolation regions are configured differently from the array isolation regions. The semiconductor image sensor may be included in as part of an imaging system that includes a processor.
Public/Granted literature
- US20080217720A1 Dual isolation for image sensors Public/Granted day:2008-09-11
Information query
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