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US07642609B2 Metal-oxide-semiconductor device with a doped titanate body 有权
具有掺杂钛酸盐体的金属氧化物半导体器件

  • Patent Title: Metal-oxide-semiconductor device with a doped titanate body
  • Patent Title (中): 具有掺杂钛酸盐体的金属氧化物半导体器件
  • Application No.: US11577707
    Application Date: 2005-10-19
  • Publication No.: US07642609B2
    Publication Date: 2010-01-05
  • Inventor: Yukiko Furukawa , Vincent Venezia , Radu Surdeanu
  • Applicant: Yukiko Furukawa , Vincent Venezia , Radu Surdeanu
  • Applicant Address: NL Eindhoven
  • Assignee: NXP B.V.
  • Current Assignee: NXP B.V.
  • Current Assignee Address: NL Eindhoven
  • Priority: GB0423343.3 20041021
  • International Application: PCT/IB2005/053425 WO 20051019
  • International Announcement: WO2006/043243 WO 20060427
  • Main IPC: H01L29/78
  • IPC: H01L29/78 ;  H01L21/22
Metal-oxide-semiconductor device with a doped titanate body
Abstract:
A metal-oxide-semiconductor (MOS) device having a body of single-crystal strontium titanate or barium titanate (10) is provided in which the body comprises a doped semiconductor region (24) adjacent a dielectric region (26). The body may further comprise a doped conductive region separated from the semiconductor region by the dielectric region. The material characteristics of single-crystal strontium titanate when doped in various ways are exploited to provide the insulating, conducting and semiconducting components of a MOS stack. Advantageously, the use of a single body avoids the presence of interface layers between the stack components which improves the characteristics of MOS devices such as field effect transistors.
Abstract(Chinese):

提供具有单晶钛酸锶或钛酸钡（10）的主体的金属氧化物半导体（MOS）器件，其中主体包括邻近电介质区域（26）的掺杂半导体区域（24）。 主体还可以包括通过电介质区域与半导体区域分离的掺杂导电区域。 当以各种方式掺杂时，单晶锶钛酸盐的材料特性被开发以提供MOS叠层的绝缘，导电和半导体元件。 有利地，单个体的使用避免了堆叠组件之间的界面层的存在，这改善了诸如场效应晶体管的MOS器件的特性。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/78 .....由绝缘栅产生场效应的
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