Invention Grant
- Patent Title: Semiconductor devices with inductors
- Patent Title (中): 具有电感器的半导体器件
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Application No.: US11183800Application Date: 2005-07-19
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Publication No.: US07642618B2Publication Date: 2010-01-05
- Inventor: Nobuhiro Shiramizu , Takahiro Nakamura , Toru Masuda , Nobuhiro Kasa , Hiroshi Mori
- Applicant: Nobuhiro Shiramizu , Takahiro Nakamura , Toru Masuda , Nobuhiro Kasa , Hiroshi Mori
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2004-240569 20040820
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01F27/28

Abstract:
Semiconductor devices are provided with high performance high-frequency circuits in which interference caused by inductors is reduced. In a semiconductor device including a modulator circuit to modulate a carrier wave by a base band signal to output an RF signal and a demodulator circuit to demodulate the RF signal by use of the carrier wave to gain the base band signal and a local oscillator to generate the carrier wave, inductors respectively having a closed loop wire are adopted. Interference caused by mutual inductance is reduced by the closed loop wire. For example, where inductors are adopted in the modulator circuit, a closed loop wire is disposed around the outer periphery of the inductors.
Public/Granted literature
- US20060038621A1 Semiconductor devices with inductors Public/Granted day:2006-02-23
Information query
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