Invention Grant
- Patent Title: Semicondutor device and protection circuit
- Patent Title (中): 半导体器件和保护电路
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Application No.: US11826182Application Date: 2007-07-12
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Publication No.: US07642621B2Publication Date: 2010-01-05
- Inventor: Yukio Takahashi
- Applicant: Yukio Takahashi
- Applicant Address: JP Kawasaki, Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kawasaki, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2006-193012 20060713
- Main IPC: H01L27/082
- IPC: H01L27/082 ; H01L27/102 ; H01L29/70 ; H01L31/11

Abstract:
In a protection circuit of an input/output terminal I/O, three types of PNP bipolar transistors are included. In a first PNP type bipolar transistor 10A, the emitter thereof is connected to the input/output terminal I/O, the base thereof is connected to a high-potential power supply terminal VDD, and the collector thereof is connected to a low-potential power supply terminal VSS. In a second PNP type bipolar transistor 10B, the emitter thereof is connected to the input/output terminal I/O, and the base and the collector thereof are connected to the high-potential power supply terminal VDD. In a third PNP type bipolar transistor 10C, the emitter thereof is connected to the low-potential power supply terminal VSS, and the base and the collector thereof are connected to the high-potential power supply terminal VDD.
Public/Granted literature
- US20080013234A1 Semiconductor device and protection circuit Public/Granted day:2008-01-17
Information query
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