Invention Grant
- Patent Title: Semiconductor device and manufacturing process thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11258213Application Date: 2005-10-26
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Publication No.: US07642640B2Publication Date: 2010-01-05
- Inventor: Toshiaki Shinohara
- Applicant: Toshiaki Shinohara
- Applicant Address: JP Chiyoda-Ku, Tokyo
- Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JP Chiyoda-Ku, Tokyo
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: JP2004-317929 20041101
- Main IPC: H01L23/04
- IPC: H01L23/04

Abstract:
The semiconductor device according to one of the embodiments of the present invention includes a metal block having first and second main surfaces and defining a recess on the first main surface. It also includes a semiconductor chip received within the recess of the metal block and mounted on the metal block. Further, a first terminal electrically connected with the semiconductor chip is provided, and a second terminal electrically connected with the metal block is also provided.
Public/Granted literature
- US20060091512A1 Semiconductor device and manufacturing process thereof Public/Granted day:2006-05-04
Information query
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