Invention Grant
- Patent Title: Integrated circuit component with passivation layer
- Patent Title (中): 具有钝化层的集成电路元件
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Application No.: US11756303Application Date: 2007-05-31
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Publication No.: US07642641B2Publication Date: 2010-01-05
- Inventor: Joachim Mahler , Ralf Otremba , Bernd Betz , Khalil Hosseini
- Applicant: Joachim Mahler , Ralf Otremba , Bernd Betz , Khalil Hosseini
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Edell, Shapiro & Finnan, LLC
- Priority: DE102004058305 20041202
- Main IPC: H01L23/14
- IPC: H01L23/14 ; H01L23/24 ; H01L23/31 ; H01L23/29 ; H01L21/52 ; H01L21/56
Abstract:
A semiconductor component includes a semiconductor chip provided with a passivation layer that covers the topmost interconnect structure of the semiconductor chip whilst leaving contact areas free. The passivation layer is in direct adhesive contact with the plastic housing composition of the semiconductor component. The passivation layer includes a polymer with embedded mineral-ceramic nanoparticles.
Public/Granted literature
- US20080093728A1 Integrated circuit component with passivation layer and methods for making the same Public/Granted day:2008-04-24
Information query
IPC分类:
