Invention Grant
US07642653B2 Semiconductor device, wiring of semiconductor device, and method of forming wiring
有权
半导体器件,半导体器件的布线以及布线的形成方法
- Patent Title: Semiconductor device, wiring of semiconductor device, and method of forming wiring
- Patent Title (中): 半导体器件,半导体器件的布线以及布线的形成方法
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Application No.: US11976308Application Date: 2007-10-23
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Publication No.: US07642653B2Publication Date: 2010-01-05
- Inventor: Takeshi Kuzuhara , Atsushi Komura , Mitsutaka Katada , Takayoshi Naruse
- Applicant: Takeshi Kuzuhara , Atsushi Komura , Mitsutaka Katada , Takayoshi Naruse
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2006-288711 20061024; JP2006-288715 20061024; JP2006-289982 20061025; JP2007-150431 20070606
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L29/40 ; H01L29/00 ; H01L21/4763

Abstract:
A semiconductor device includes a substrate, an element formed in the substrate, an insulation film formed on the substrate, wiring layers, and an electrode pad. The wiring layers are multilayered and electrically coupled to the element through the insulation film. The electrode pad is electrically coupled to a top wiring layer of the wiring layers. The top wiring layer is configured to be a top wiring-electrode layer that doubles as an electrode layer disposed under the electrode pad. The electrode layer of the top wiring-electrode layer is disposed directly above the element. The electrode pad and the electrode layer are multilayered to form a pad structure.
Public/Granted literature
- US20080105947A1 Semiconductor device, wiring of semiconductor device, and method of forming wiring Public/Granted day:2008-05-08
Information query
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