Invention Grant
US07642835B1 System for substrate potential regulation during power-up in integrated circuits 有权
集成电路上电期间衬底电位调节系统

  • Patent Title: System for substrate potential regulation during power-up in integrated circuits
  • Patent Title (中): 集成电路上电期间衬底电位调节系统
  • Application No.: US10712523
    Application Date: 2003-11-12
  • Publication No.: US07642835B1
    Publication Date: 2010-01-05
  • Inventor: Robert FuTien-Min Chen
  • Applicant: Robert FuTien-Min Chen
  • Main IPC: H03K3/01
  • IPC: H03K3/01 H01L25/00
System for substrate potential regulation during power-up in integrated circuits
Abstract:
An integrated circuit with body-bias inputs coordinated by a switch at initial power application. A switch coupled to the N-well bias and P-type substrate bias lines of an integrated circuit selectively couples the substrate to ground or the substrate bias supply, depending upon the state of the bias supply lines. During power-up and the initial application of the N-well bias, the substrate is coupled to ground to prevent a leakage induce rise in the substrate potential. Upon sensing the presence of the substrate bias potential on the substrate bias line, the switch couples the substrate to the substrate bias line instead of ground. In another embodiment, a switch indirectly senses the availability of the substrate bias potential by sensing a charge pump enable signal.
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